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C4606 - Silicon NPN Transistor

Key Features

  • 4.5±0.1 3.5±0.1.
  • High collector-emitter voltage (Base open) VCEO.
  • Optimum for the driver stage of a low-frequency and 25 W to 30 R 0.7 R 0.9 W output amplifier.
  • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board (0.85) 0.45±0.05 2.0±0.2 4.1±0.2 2.4±0.2 1.0±0.1 /0.55±0.1.
  • Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit 1.25±0.05 c e. d ty Collector-base vo.

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Datasheet Details

Part number C4606
Manufacturer Panasonic
File Size 253.70 KB
Description Silicon NPN Transistor
Datasheet download datasheet C4606 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm Complementary to 2SA1762 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) (1.0) (0.4) ■ Features 4.5±0.1 3.5±0.1 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 R 0.7 R 0.9 W output amplifier • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board (0.85) 0.45±0.05 2.0±0.2 4.1±0.2 2.4±0.2 1.0±0.1 /0.55±0.1 ■ Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit 1.25±0.05 c e.