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Power Transistors
2SC4638
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
■ Features
10.0±0.2 5.5±0.2
4.2±0.2 2.7±0.2
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
φ 3.1±0.1
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings TC = 25°C
1.4±0.1
1.3±0.2
/ Parameter
Symbol Rating
Unit
14.0±0.5 Solder Dip
(4.0)
0.8±0.1
0.5+–00..12
Collector-base voltage (Emitter open) VCBO
800
V
e ) Collector-emitter voltage (E-B short) VCES
800
V
c type Collector-emitter voltage (Base open) VCEO
500
V
n d tage.
C4638 Datasheet
