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C4953 Datasheet 2sc4953

Manufacturer: Panasonic

Overview: Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.

Key Features

  • br>.
  • High-speed switching φ 3.2±0.1 15.0±0.5.
  • High collector-base voltage (Emitter open) VCBO.
  • Wide safe operation area.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Dielectric breakdown voltage of the package: > 5 kV 1.4±0.2 1.6±0.2 2.6±0.1 /.
  • Absolute Maximum Ratings Ta = 25°C 0.8±0.1 0.55±0.15 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 500 13.7±0.2 4.2±0.2 Solder Dip V c e. d ty.

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