Satisfactory linearity of forward current transfer ratio hFE.
Dielectric breakdown voltage of the package: > 5 kV
1.4±0.2 1.6±0.2
2.6±0.1
/.
Absolute Maximum Ratings Ta = 25°C
0.8±0.1
0.55±0.15
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
500
13.7±0.2 4.2±0.2
Solder Dip
V
c e. d ty.
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Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
3.0±0.5
■ Features
• High-speed switching
φ 3.2±0.1
15.0±0.5
• High collector-base voltage (Emitter open) VCBO
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV
1.4±0.2 1.6±0.2
2.6±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
0.8±0.1
0.55±0.15
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
500
13.7±0.2 4.2±0.2
Solder Dip
V
c e.
C4953 Datasheet
