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Power Transistors
2SC5104
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
8.5±0.2
Unit: mm
3.4±0.3
6.0±0.2
1.0±0.1
■ Features
3.0–+00..24 4.4±0.5
14.4±0.5
10.0±0.3 1.5±0.1
• High-speed switching
1.5–+00.4
• High collector-base voltage (Emitter open) VCBO
• Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the
/ printed circuit board, etc. of small electronic equipment
4.4±0.5 2.0±0.5
0 to 0.4
0.8±0.1
2.54±0.3 1.4±0.1 5.08±0.5
R = 0.5 R = 0.5
1.0±0.1
0.4±0.1
123
(8.5) (6.0) 1.3
■ Absolute Maximum Ratings TC = 25°C
e e) Parameter
Symbol Rating
Unit
(7.6) (1.5)
c e.
C5104 Datasheet
