Datasheet Summary
Power Transistors
2SC5392
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm s Features
9.9±0.3
4.6±0.2
2.9±0.2
3.0±0.5 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO)
φ3.2±0.1 q Satisfactory linearity of foward current transfer ratio hFE q Dielectric breakdown voltage of the package: > 5kV
15.0±0.5
/ 1.4±0.2
2.6±0.1
1.6±0.2 e s...