Part C5392
Description Silicon NPN Transistor
Category Transistor
Manufacturer Panasonic
Size 183.32 KB
Panasonic
C5392

Overview

  • 9±0.3
  • 6±0.2
  • 9±0.2
  • 0±0.5 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) φ3.2±0.1 q Satisfactory linearity of foward current transfer ratio hFE q Dielectric breakdown voltage of the package: > 5kV
  • 0±0.5 / 1.4±0.2
  • 6±0.1
  • 6±0.2 e s Absolute Maximum Ratings (TC=25˚C) c type) Parameter Symbol Ratings Unit
  • 7±0.2 4.2±0.2 n d tage. ued Collector to base voltage VCBO 800 V a e cle s contin Collector to emitter voltage VCES 800 V cy is VCEO 500 V n u t life ed, d Emitter to base voltage VEBO 8 V duc typ Peak collector current ICP
  • 0 A te tin ur Pro tinued Collector current IC fo on Base current IB wing disc Collector power TC=25°C in n follo ned dissipation Ta=25°C PC
  • 5 A 25 W