Datasheet4U Logo Datasheet4U.com

C5442 - Silicon NPN triple diffusion mesa type Power Transistors

Datasheet Summary

Features

  • q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1500 1500 600 5 20 15 8 100 3.5 Junction temperature Storage.

📥 Download Datasheet

Datasheet preview – C5442

Datasheet Details

Part number C5442
Manufacturer Panasonic
File Size 151.60 KB
Description Silicon NPN triple diffusion mesa type Power Transistors
Datasheet download datasheet C5442 Datasheet
Additional preview pages of the C5442 datasheet.

📁 Similar Datasheet

  • C5440 - 2SC5440 (Panasonic Semiconductor)
  • C5443 - NPN Triple Diffused Planar Silicon Transistor (Sanyo)
  • C5445 - 30 dB Dual Directional Coupler (Werlatone)
  • C5445 - SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR (Toshiba)
  • C5446 - 2SC5446 (Toshiba Semiconductor)
  • C5447 - 2SC5447 (Hitachi Semiconductor)
  • C5448 - 2SC5448 (Hitachi Semiconductor)
  • C5449 - 2SC5449 (Hitachi Semiconductor)
  • C5404 - 2SC5404 (Toshiba Semiconductor)
  • C5411 - 2SC5411 (Toshiba Semiconductor)
Other Datasheets by Panasonic
  • C5442A - Silicon NPN triple diffusion mesa type Power Transistors
  • C5406 - Silicon NPN triple diffusion mesa type Power Transistors
  • C5406A - Silicon NPN triple diffusion mesa type Power Transistors
  • C5407 - 2SC5407
  • C5413 - Power Transistors
  • C5419 - Silicon NPN Transistor
  • C5423 - 2SC5423
  • C5457 - Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text
Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmatiSolo2d0.enr0.±D0i.2p.55DisMcaionnttiennuaendc Power Transistors 2SC5442, 2SC5442A Silicon NPN triple diffusion mesa type For horizontal deflection output s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1500 1500 600 5 20 15 8 100 3.
Published: |