Datasheet Summary
Power Transistors
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2SC5584
Silicon NPN triple diffusion mesa type
For horizontal deflection output
20.0±0.5
Unit: mm
(10.0) (6.0) (2.0) (4.0)
5.0±0.3 (3.0) φ 3.3±0.2
- Features
- High breakdown voltage, and high reliability through the use of a glass passivation layer
- High-speed switching
- Wide safe operation area
26.0±0.5
(3.0)
(1.5)
(1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 (1.5) 2.7±0.3
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