C5632 - Silicon NPN Transistor

Datasheet Summary

Features

s 3.
High transition frequency fT.
S-Mini type package, allowing downsizing of the equipment 0.15+.
00..0150 1.25±0.10 2.1±0.1 5˚ and automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.3±0.1 /.
Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0.2±0.1 V c e. d ty Collector-emitter voltage (Base open) VCEO 8 V n d stag tinue Emitter-base voltage (Collector open.

Panasonic

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Datasheet Details

Part number	C5632
Manufacturer	Panasonic
File Size	170.68 KB
Description	Silicon NPN Transistor
Datasheet	C5632 Datasheet
Additional preview pages of the C5632 datasheet.

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Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching Unit: mm (0.425) 0.3+–00..01 ■ Features 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment 0.15+–00..0150 1.25±0.10 2.1±0.1 5˚ and automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0.2±0.1 V c e. d ty Collector-emitter voltage (Base open) VCEO 8 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 0 to 0.1 0.9±0.1 0.9–+00..

Published: Mar 2, 2021 |