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Transistors
2SC5632
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
Unit: mm
(0.425)
0.3+–00..01
■ Features 3
• High transition frequency fT • S-Mini type package, allowing downsizing of the equipment
0.15+–00..0150
1.25±0.10 2.1±0.1 5˚
and automatic insertion through the tape packing
1
2
(0.65) (0.65)
1.3±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.0±0.2
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
15
0.2±0.1
V
c e. d ty Collector-emitter voltage (Base open) VCEO
8
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
0 to 0.1 0.9±0.1 0.9–+00..
C5632 Datasheet
