• Part: C5863
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 215.47 KB
Download C5863 Datasheet PDF
Panasonic
C5863
Features 5˚ - High collector-emitter voltage (Base open) VCEO (0.65) - High transition frequency f T (0.95) (0.95) 1.9±0.1 2.90+- 00..0250 / - Absolute Maximum Ratings Ta = 25°C 10˚ Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 1.1- +00..12 1.1- +00..13 V c type Collector-emitter voltage (Base open) VCEO 0 to 0.1 V n d tage. ued Emitter-base voltage (Collector open) VEBO V le s ontin Collector current 70 m A a elifecyc disc Peak collector current 100 m A n u t ed, Collector power dissipation 200 m W roduc d typ Junction temperature Tj °C te tin ur P tinue Storage temperature Tstg - 55 to +150 °C Marking Symbol: 7H 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n es follopwlianngefdodiscon - Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB =...