Panasonic CNA1007H
CNA1007H is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected.| Part No. | CNA1007H |
|---|---|
| Datasheet | CNA1007H Download |
| Manufacturer |  Panasonic |
| Description | Photo Interrupter |
| Buy | Stock & Price |
FEATURES
Position detection accuracy : 0.3 mm Gap width : 5 mm Horizontal slit type The type directly attached to PCB ( with a positioning pins) +0 φ1.2 –0.1 2 1 4ABSOLUTE MAXIMUM RATINGS
(Ta = 25˚C) Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Reverse voltage (DC) Symbol Ratings VR IF PD*1 IC 5 50 75 20 30 5 100 – 40 to +100 Unit V mA mW mA V V mW ˚C ˚C Internal connector 2 3 1 Pin connection Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature *1 PC*2 Tstg Operating ambient temperature Storage temperature Topr –25 to +85 Input power derating ratio is 1.0 mW/˚C at Ta = 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta = 25˚C.ELECTRICAL CHARACTERISTICS
(Ta = 25˚C) Parameter Input characteristics Reverse current (DC) Forward voltage (DC) Symbol VF IR ICEO VR = 3V VCE = 10V 0.5 5 Conditions IF = 20mA min typ 1.25 max 1.4 10 200 14 0.4 Unit V µA nA m...
