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CNB1303 Datasheet PDF

Panasonic CNB1303

CNB1303 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package.
Part No. CNB1303
Datasheet CNB1303 Download
Manufacturer
Panasonic
Description Reflective Photosensor
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CNB1303 datasheet page 1 preview

FEATURES

Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used Fast response : tr, tf = 20µs (typ.) Easy interface for control circuit

APPLICATIONS

Control of motor and other rotary units Detection of position and edge Detection of paper, film and cloth Start, end mark detection of magnetic tape 9.0±1.0 2.7±0.2 9.0±1.0 0.4 Mark for indicating emitter side C0.5 13 Chip center 2.0±0.2 Unit : mm 4-0.7 4-0.5 ±0.1 24 1.8 3.4±0.3 0.5 0.15 1.5±0.2 3 41 2 Pin connection

ABSOLUTE MAXIMUM RATINGS

(Ta = 25˚C) Parameter Symbol Ratings Unit Reverse voltage (DC) VR 3 V Input (Light Forward current (DC) emitting diode) IF 50 mA Power dissipation PD*1 75 mW Collector current IC 20 mA Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation VCEO VECO PC*2 30 5 50 V V mW Temperature Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 0.67 mW/˚C at Ta ≥ 25˚C.
CNB1303 page 2 preview