Low collector-emitter saturation voltage VCE(sat).
Low ON resistance Ron.
High forward current transfer ratio hFE
0.7±0.1
Unit: mm
5.0±0.2 4.0±0.2
0.7±0.2 12.9±0.5.
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) www. DataSheet4U. com Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V.
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Transistors
2SD1302
Silicon NPN epitaxial planar type
For low-voltage output amplification For muting For DC-DC converter ■ Features
• Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE
0.7±0.1
Unit: mm
5.0±0.2 4.0±0.2
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) www.DataSheet4U.com Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 0.5 1 600 150 −55 to +150 Unit V V V A A mW °C °C
0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 2.5+0.6 –0.2 0.45+0.15 –0.1
5.1±0.
D1302 Datasheet
