D1302 Datasheet | Panasonic

Features - Low collector-emitter saturation voltage VCE(sat) - Low ON resistance Ron - High forward current transfer ratio h FE 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 12.9±0.5 - Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) .. Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 0.5 1 600 150 - 55 to +150 Unit V V V A A m W °C °C 0.45+0.15 - 0.1 2.5+0.6 - 0.2 1 2 3 2.5+0.6 - 0.2 0.45+0.15 - 0.1 5.1±0.2 1: Emitter 2: Collector 3: Base TO-92-B1 Package - Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio - 1 Symbol VCBO VCEO VEBO ICBO h FE1 - 2 h FE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (mon base, input open circuited) ON resistanse - 3 VCE(sat) VBE(sat) f T Cob Ron Conditions IC = 10 µA, IE = 0 IC = 1 m A, IB = 0 IE = 10 µA, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 20 m A IC = 0.5 A, IB = 50 m A VCB = 10 V, IE = - 50 m A, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 200 10 1.0 200 60 0.13 0.40 1.2 V V MHz p F Ω Min 25 20 12 100 800 Typ Max Unit V V V n A  Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. - 1: Pulse measurement - 2: Rank classification - 3: Ron Measurement circuit 1 kΩ Rank h FE1 R 200 to 350 S 300 to 500 T 400 to 800 IB = 1 m A f = 1 k Hz V = 0.3 V VB VV VA Ron = VB × 1 000 (Ω) VA - VB 2.3±0.2 Publication date: January 2003 SJC00215BED...