D1475
D1475 is 2SD1475 manufactured by Panasonic.
es q q q q
High-speed switching Satisfactory linearity of foward current transfer ratio h FE Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 60 6 8 4 1 35 2 150
- 55 to +150 Unit V V V A A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
1.4±0.1
1.3±0.2
Solder Dip s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
14.0±0.5
0.8±0.1
0.5 +0.2
- 0.1
2.54±0.25 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter TO- 220 Full Pack Package(a) s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
- h FE1
(TC=25˚C)
Symbol ICBO IEBO VCEO h FE1- h FE2 VBE VCE(sat) f T ton tstg tf Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25m A, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 1A IC = 2A, IB = 0.2A VCE = 12V, IC = 0.2A, f = 10MHz IC = 4A, IB1 = 0.4A, IB2 =
- 0.4A, VCC = 50V 50 0.35 1 0.3 60 70 20 1.2 1 V V MHz µs µs µs 320 min typ max 100 100 Unit µA µA V
Rank classification
Q 70 to 150 P 120 to 250 O 160 to 320
Rank h FE1
Power Transistors
- Ta
80 4 IB=40m A TC=25˚C 10 (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W)
2SD1475
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