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D1640 - 2SD1640

Features

  • A µA  V V 0.1 1 4 000 40 000 1.5 2.0 Collector-emitter saturation voltage.
  • 1 Base-emitter saturation voltage.
  • 1 Note) 1. Measuring methods are based on.

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Datasheet Details

Part number D1640
Manufacturer Panasonic
File Size 111.84 KB
Description 2SD1640
Datasheet download datasheet D1640 Datasheet
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Power Transistors www.DataSheet4U.com 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification φ 3.16±0.1 8.0+0.5 –0.1 3.2±0.2 3.8±0.3 1.9±0.1 • High forward current transfer ratio hFE • Large peak collector current ICP • High collector-emitter voltage (Base open) VCEO ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 100 5 2 3 1.2 150 −55 to +150 Unit V V V A A W °C °C B 1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 16.0±1.
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