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D2057 - 2SD2057

Key Features

  • q Incorporating a built-in damper diode q Reduction of a parts count and simplification of a circuit are al- lowed q High breakdown voltage with high reliability q High-speed switching q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current.

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Power Transistors 2SD2057 Silicon NPN triple diffusion planar type For horizontal deflection output Unit: mm s Features q Incorporating a built-in damper diode q Reduction of a parts count and simplification of a circuit are al- lowed q High breakdown voltage with high reliability q High-speed switching q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VEBO ICP IC IB PC 1500 1500 7 20 5 4 100 3 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V