q High foward current transfer ratio hFE. q Low collector to emitter saturation voltage VCE(sat). q High emitter to base voltage VEBO. q Low noise voltage NV. s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 50 40 15 100 50 125 125.
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Transistor
2SD2345
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q High foward current transfer ratio hFE. q Low collector to emitter saturation voltage VCE(sat). q High emitter to base voltage VEBO. q Low noise voltage NV.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 50 40 15 100 50 125 125
–55 ~ +125
Unit V V V mA mA mW ˚C ˚C
0.2–+00..015
Unit: mm
1.6±0.15 0.4 0.8±0.1 0.4
1 3
2
1.6±0.1 1.0±0.1 0.5 0.5
0.15–+00..015
0.75±0.15 0.45±0.1 0.3
0 to 0.1
0.2±0.
D2345 Datasheet
