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D2457 - 2SD2457

Key Features

  • q High collector to emitter voltage VCEO. q Large collector power dissipation PC. q Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3A Collector current IC 1.5 A Collector power dissipatio.

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Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm s Features q High collector to emitter voltage VCEO. q Large collector power dissipation PC. q Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3A Collector current IC 1.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.