q Low collector to emitter saturation voltage VCE(sat). q Satisfactory operation performances at high efficiency with the
low-voltage power supply. s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 40 20 7 8 5 0.75 150.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
D965. For precise diagrams, and layout, please refer to the original PDF.
Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope s Features q Low collector to emitter saturation voltage VCE(sat...
View more extracted text
scope s Features q Low collector to emitter saturation voltage VCE(sat). q Satisfactory operation performances at high efficiency with the low-voltage power supply. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 40 20 7 8 5 0.75 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 13.5±0.5 5.1±0.2 5.0±0.2 Unit: mm 4.0±0.2 +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 2.3±0.2 123 2.54±0.
D965 Datasheet
