D965 - Silicon NPN Transistor

Features

q Low collector to emitter saturation voltage VCE(sat). q Satisfactory operation performances at high efficiency with the low-voltage power supply. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 40 20 7 8 5 0.75 150.
55 ~ +150 Unit V V V A A W ˚C ˚C.

Panasonic

Datasheet Details

Part number	D965
Manufacturer	Panasonic
File Size	37.51 KB
Description	Silicon NPN Transistor
Datasheet	D965 Datasheet
Additional preview pages of the D965 datasheet.

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Full PDF Text Transcription

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Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope s Features q Low collector to emitter saturation voltage VCE(sat). q Satisfactory operation performances at high efficiency with the low-voltage power supply. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 40 20 7 8 5 0.75 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 13.5±0.5 5.1±0.2 5.0±0.2 Unit: mm 4.0±0.2 +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 2.3±0.2 123 2.54±0.

Published: Jul 19, 2019 |