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DB27308 - Silicon epitaxial planar type Diode

Key Features

  • s.
  • Short reverse recovery time trr.
  • Low forward voltage VF.
  • Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant).
  • Marking Symbol: C2.
  • Packaging DB2730800L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage VR 30 Repetitive peak reverse voltage VRRM 30 Forward current (Average) IF(AV) 100 Peak forward current IFM 200 Non-r.

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Datasheet Details

Part number DB27308
Manufacturer Panasonic
File Size 438.82 KB
Description Silicon epitaxial planar type Diode
Datasheet download datasheet DB27308 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DB27308 Silicon epitaxial planar type For high speed switching circuits DB2S308 in SSSMini2 type package Unit: mm  Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: C2  Packaging DB2730800L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage VR 30 Repetitive peak reverse voltage VRRM 30 Forward current (Average) IF(AV) 100 Peak forward current IFM 200 Non-repetitive peak forward surge current *1 IFSM 1 Junction temperature Tj 125 Operating ambient temperature Topr –40 to +85 Storage temperature Tstg –55 to +125 Note) *1: 50 Hz sine wave 1 cycle (Non-repe