DB2J209
DB2J209 is Silicon epitaxial planar type manufactured by Panasonic.
Features
- Short reverse recovery time trr
- Low forward voltage VF
- Halogen-free / Ro HS pliant (EU Ro HS / UL-94 V-0 / MSL: Level 1 pliant) Unit: mm
- Marking Symbol: BE
- Packaging
DB2J20900L Embossed type (Thermo-pression sealing): 3 000 pcs / reel (standard)
- Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current
- Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125
- 55 to +125 Unit V V m A A °C °C
1: Cathode 2: Anode Panasonic JEITA Code SMini2-F5-B SC-90A
Note)
- : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
- Electrical Characteristics Ta = 25°C±3°C
Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time
- Symbol VF1 VF2 IR Ct trr IF = 10 m A IF = 500 m A VR = 10 V VR = 10 V, f = 1 MHz IF = IR = 100 m A, Irr = 0.1 × IR , RL = 100 Ω 7 2.4 Conditions Min Typ Max 0.3 0.5 30 Unit V V µA p F ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 400 MHz
- : trr measurement circuit
Bias Application Unit (N-50BU) tr 10% Input Pulse tp t IF Output Pulse trr t
VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
Pulse Generator (PG-10N) Rs = 50 Ω
Irr = 0.1 × IR IF = 100 m A IR = 100 m A RL = 100 Ω
Publication date: July 2012
Ver. CED
Free Datasheet http://../
DB2J209_ IF-VF
IF VF
DB2J209_ IR-VR
10- 1 10- 2
DB2J209_Ct-VR
IR VR
Ct VR
40 85°C Ta = 25°C
Terminal capacitance Ct (p F)
10-...