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DB3J316J - Silicon epitaxial planar type

Features

  • Short reverse recovery time trr.
  • Low forward voltage VF.
  • Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant).
  • Marking Symbol: 5G.
  • Basic Part Number Dual DB2S316 (Common Anode).
  • Packaging DB3J316J0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage Repetitive peak reverse voltage Forward current (Average) Single Double.

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Datasheet Details

Part number DB3J316J
Manufacturer Panasonic
File Size 460.80 KB
Description Silicon epitaxial planar type
Datasheet download datasheet DB3J316J Datasheet
Additional preview pages of the DB3J316J datasheet.

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    Full PDF Text Transcription

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    DB3J316J Silicon epitaxial planar type For small current rectification DB3X316J in SMini3 type package Unit: mm  Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: 5G  Basic Part Number Dual DB2S316 (Common Anode)  Packaging DB3J316J0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage Repetitive peak reverse voltage Forward current (Average) Single Double *1 VR VRRM IF(AV) 30 30 100 70 Peak forward current Single Double *1 IFM 300 200 Non-repetitive peak forward surge current *2 IFSM 1 Junction temperature Tj 125 Operating ambient temperature Topr –40 to
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