Download the DSCQ00100L datasheet PDF.
This datasheet also covers the DSCQ001 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
High forward current transfer ratio hFE with excellent linearity.
Low collector-emitter saturation voltage VCE(sat).
Full PDF Text Transcription for DSCQ00100L (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
DSCQ00100L. For precise diagrams, and layout, please refer to the original PDF.
DSCQ001 Silicon NPN epitaxial planar type For general amplification Complementary to DSAQ001 DSC3001 in USSMini3 type package Features High forward current transfer ra...
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in USSMini3 type package Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: C1 Packaging DSCQ00100L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Operating ambie
DSCQ00100L Datasheet
