Panasonic FJ330301
FJ330301 is P-channel small signal MOS FET employed small size surface mounting package. FJ330301 FJ330301_ ID-VDS −100 ID VDS Ta = 25°C VGS = −4.5 V −2.5 V −102 VDS = −3 V −10 FJ330301_ ID-VGS ID VGS FJ330301_ RDS(on)-VGS 103 RDS(on) VGS −80 Drain-source ON resistance RDS(on) (Ω) Ta = 25°C ID = 0.01 A Drain current ID (mA) Drain current ID (mA) −60 −1 Ta = 85°C 102 −40 −10−1 25°C 10...| Part No. | FJ330301 |
|---|---|
| Datasheet | FJ330301 Download |
| Manufacturer |  Panasonic |
| Description | Silicon P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V) High-speed switching Small size surface mounting package: SSSMini3-F2-B Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Marking Symbol: U1 Internal Connection (D) 3 Packaging Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard) ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Rating -30 ±12 -100 -200 100 150 –55 to +150 Unit V V mA 1 (G) 2 (S) mA °C °C mW Publication date: January 2011 Ver. CED 1 datasheet pdf - This product complies with the RoHS Directive (EU 2002/95/EC). FJ330301 ELECTRICAL CHARACTERISTICS
Ta = 25°C±3°C Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltag...
