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FJ330301 - Silicon P-Channel MOSFET

Key Features

  • s.
  • Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V).
  • High-speed switching.
  • Small size surface mounting package: SSSMini3-F2-B.
  • Contributes to miniaturization of sets, reduction of component count.
  • Eco-friendly Halogen-free package.
  • Marking Symbol: U1.
  • Internal Connection (D) 3.
  • Packaging Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25°C Parameter Drain-s.

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Full PDF Text Transcription for FJ330301 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FJ330301. For precise diagrams, and layout, please refer to the original PDF.

This product complies with the RoHS Directive (EU 2002/95/EC). FJ330301 Silicon P-channel MOS FET For switching circuits  Overview FJ330301 is P-channel small signal MOS...

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r switching circuits  Overview FJ330301 is P-channel small signal MOS FET employed small size surface mounting package.  Package  Code SSSMini3-F2-B  Pin Name 1: Gate 2: Source 3: Drain  Features  Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V)  High-speed switching  Small size surface mounting package: SSSMini3-F2-B  Contributes to miniaturization of sets, reduction of component count.

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