FK330301 - Silicon N-channel MOS FET

Datasheet Summary

Features

s.
Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V).
Small size surface mounting package: SSSMini3-F2-B.
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package.
Packaging Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard).
Absolute Maximum Ratings Ta = 25°C Parameter Symbol Drain-source surrender voltage VDSS Gate-source surrender voltage VGSS Drain curren.

Panasonic

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Datasheet Details

Part number	FK330301
Manufacturer	Panasonic
File Size	491.19 KB
Description	Silicon N-channel MOS FET
Datasheet	FK330301 Datasheet
Additional preview pages of the FK330301 datasheet.

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This product complies with the RoHS Directive (EU 2002/95/EC). FK330301 Silicon N-channel MOS FET For switching circuits  Overview FK330301 is N-channel small signal MOS FET employed small size surface mounting package.  Features  Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V)  Small size surface mounting package: SSSMini3-F2-B  Contributes to miniaturization of sets, reduction of component count.

Published: Jun 10, 2016 |