Datasheet4U Logo Datasheet4U.com

FK8V0305 - Silicon N-channel MOS FET

Features

  • s.
  • Low drain-source ON resistance: RDS(on) typ. = 11 mW (VGS = 10 V).
  • High-speed switching: Qg = 5.1 nC.
  • Small size surface mounting package: WMini8-F1.
  • Contributes to mount area reduction.
  • Eco-friendly Halogen-free package.
  • Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain.

📥 Download Datasheet

Datasheet preview – FK8V0305

Datasheet Details

Part number FK8V0305
Manufacturer Panasonic
File Size 282.66 KB
Description Silicon N-channel MOS FET
Datasheet download datasheet FK8V0305 Datasheet
Additional preview pages of the FK8V0305 datasheet.

📁 Similar Datasheet

Other Datasheets by Panasonic

Full PDF Text Transcription

Click to expand full text
This product complies with the RoHS Directive (EU 2002/95/EC). FK8V0305 Silicon N-channel MOS FET For DC-DC converter circuits  Overview N-channel single type, MOS FET in a compact surface mount type package.  Features  Low drain-source ON resistance: RDS(on) typ. = 11 mW (VGS = 10 V)  High-speed switching: Qg = 5.
Published: |