FK8V0305
FK8V0305 is Silicon N-channel MOS FET manufactured by Panasonic.
Overview
N-channel single type, MOS FET in a pact surface mount type package.
- Features
- Low drain-source ON resistance: RDS(on) typ. = 11 m W (VGS = 10 V)
- High-speed switching: Qg = 5.1 n C
- Small size surface mounting package: WMini8-F1
- Contributes to mount area reduction
- Eco-friendly Halogen-free package
- Packaging Embossed type (Thermo-pression sealing): 3000 pcs / reel (standard)
- Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage Gate-source surrender voltage
Drain current
- 1 t = 10 s
VDSS VGSS
33 ±20 8 10
Peak drain current
- 1, 2 Souce current (Body diode)
Power dissipation
- 1 t = 10 s
IDP IS
(BD)
32 8 1 1.5
Channel temperature
Tch 150
Storage temperature
Tstg
- 55 to +150
Note)
- 1: Mounted on a glass epoxy PC board: 25.4 mm ×...
