GN01100B Datasheet PDF

ELECTRICAL CHARACTERISTICS

VDD1=VDD2=3.0 V, f=906 MHz, Ta=25 °C±3 °C Parameter Circuit current Power gain 1 Power gain 2 *1 *1 *1 Symbol IDD PG1 PG2 DR * 1, 2 Conditions VAGC=2.0 V, PIN=−20 dBm VAGC=2.0 V, PIN=−20 dBm VAGC=0.5 V, PIN=−20 dBm PG1 − PG2 Pin =− 20 dBm VAGC=2.0 V, POUT=5 dBm IS-95 modulation, 900 kHz Detuning 30 kHz Bandwidth VAGC= 2.0 V, Pout=5 dBm IS-95 modulation, 1.98 MHz Detuning 30 kHz Bandwidth min typ 37 0.7±0.1 0.9±0.1 s

ABSOLUTE MAXIMUM RATINGS

Ta=25 °C max 45 −5 Unit mA dB dB dB 20 23 − 10 Dynamic range Gain control sensitivity Adjacent channel leakage power (ACP) 1 *1, 3 Adjacent channel leakage power (ACP) 1 *1, 3 30 25 34 49 − 54 90 − 50 GS ACP1 dB/V dBc ACP2 − 74 − 65 dBc Note) *1 : Refer to measurement circuit. *2 : {PG(VAGC=1.6V)[dB]− PG(V AGC=1.2V)[dB]/0.4[V] *3 : Design-guaranteed items. 0.2±0.1 s

FEATURES

2.1±0.1 0.1 For the preamplifier of the transmitting section in a cellular phone Other communication equipment 0.2±0.05 0.12 +0.05 −0.02 4 6 5 1 GN011...