• Part: K1803
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Panasonic
  • Size: 46.41 KB
Download K1803 Datasheet PDF
Panasonic
K1803
Features q Avalanche capacity guaranteed: EAS > 60m J q VGSS = ±30V guaranteed q High-speed switching: tf = 80ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Avalanche energy capacity VDSS VGSS ID IDP EAS- 900 ±30 ±8 ±16 60 Allowable power dissipation TC = 25°C Ta = 25°C PD 100 3 Channel temperature Storage temperature Tch 150 Tstg - 55 to +150 - L = 1.9m H, IL = 8A, VDD = 50V, 1 pulse Unit V V A A m J °C °C s Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS Gate to Source leakage current IGSS Drain to Source breakdown voltage VDSS Gate threshold voltage Vth Drain to Source ON-resistance RDS(on) Forward transfer admittance | Yfs | Diode...