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Power F-MOS FETs
2SK1833
Silicon N-Channel Power F-MOS FET
s Features q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 30ns q No secondary breakdown
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC Pulse
Avalanche energy capacity
VDSS VGSS ID IDP EAS*
500 ±30 ±2.5 ±5 15.6
Allowable power dissipation
TC = 25°C Ta = 25°C PD
40 2
Channel temperature Storage temperature
Tch 150 Tstg −55 to +150
* L = 5mH, IL = 2.
K1833 Datasheet
