Datasheet Summary
Power F-MOS FETs
2SK2016
Silicon N-Channel Power F-MOS s Features q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) q High-speed switching : tf= 38ns(typ) q No secondary breakdown q For low-voltage drive(VGS= 4V) q Taping supply possible s Applications q DC-DC converter q Non-contact relay q Solenoid drive q Motor drive s...