K2016
Overview
Power F-MOS FETs 2SK2016 Silicon N-Channel Power F-MOS s Features q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) q High-speed switching : tf= 38ns(typ) q No secondary breakdown q For low-voltag...
| Part | K2016 |
|---|---|
| Description | Silicon N-Channel Power F-MOS |
| Manufacturer | Panasonic |
| Size | 32.45 KB |