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Power F-MOS FETs
2SK2340
Silicon N-Channel Power F-MOS FET
s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage VDSS 900 V
Gate to Source voltage
VGSS
±30
V
Drain current
DC Pulse
ID IDP
±5 A ±10 A
Avalanche energy capacity
EAS*
45
mJ
Allowable power dissipation
TC = 25°C PD
Ta = 25°C
50 W
2
Channel temperature Storage temperature * L = 3.
K2340 Datasheet
