K3995 - Silicon N-Channel MOSFET

Panasonic

Key Features

s.
Medium breakdown voltag: VDSS = 200 V, ID = 30 A.
Low ON resistance, optimum for PDP panel drive.
Package.
Code TO-220C-G1.
Marking Symbol: K3995.
Pin Name 1. Gate 2. Drain 3. Source Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current.
1 VDSS VGSS ID IDP Drain reverse current IDR Peak drain reverse current.
1 IDRP Avalanche energy capability.
2 Drain power dissipation Junction te.

K3995 silicon n-channel mosfet by Panasonic - Datasheet Preview

Datasheet Details

Part number	K3995
Manufacturer	Panasonic
File Size	359.57 KB
Description	Silicon N-Channel MOSFET
Datasheet	K3995 Datasheet

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This product complies with the RoHS Directive (EU 2002/95/EC). Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP  Features  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive  Package  Code TO-220C-G1  Marking Symbol: K3995  Pin Name 1. Gate 2. Drain 3.