K3995 Overview
This product plies with the RoHS Directive (EU 2002/95/EC). Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP.
K3995 Key Features
- Medium breakdown voltag: VDSS = 200 V, ID = 30 A
- Low ON resistance, optimum for PDP panel drive
- Package
- Code TO-220C-G1
- Marking Symbol: K3995
- Pin Name 1. Gate 2. Drain 3. Source
- Electrical Characteristics TC = 25°C±3°C