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K4174 - Silicon N-channel enhancement MOS FET

Features

  • s.
  • Gate-source surrender voltage VGSS : ±25 V guaranteed.
  • Avalanche energy capability guaranteed: EAS > 216 mJ.
  • High-speed switching: tf = 90 ns (typ. ).
  • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current.
  • Avalanche energy capability VDSS VGSS ID IDP EAS 110 ±25 ±28 ±130 216 V V A A mJ Avalanche energy capability.
  • EAR 69 mJ 40 W Drain p.

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Datasheet Details

Part number K4174
Manufacturer Panasonic
File Size 297.18 KB
Description Silicon N-channel enhancement MOS FET
Datasheet download datasheet K4174 Datasheet
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    Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttieProductnnulifecycleaenstage.dce/ Power MOS FETs This product complies with the RoHS Directive (EU 2002/95/EC). 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits  Features  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ  High-speed switching: tf = 90 ns (typ.
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