• Part: K4174
  • Manufacturer: Panasonic
  • Size: 297.18 KB
Download K4174 Datasheet PDF
K4174 datasheet preview
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K4174 Key Features

  • Gate-source surrender voltage VGSS : ±25 V guaranteed
  • Avalanche energy capability guaranteed: EAS > 216 mJ
  • High-speed switching: tf = 90 ns (typ.)

K4174 Description

Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttieProductnnulifecycleaenstage.dce/ Power MOS FETs This product plies with the RoHS Directive (EU 2002/95/EC). 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits.