K4208 - Silicon N-channel enhancement MOS FET

Panasonic

Key Features

s.
Gate-source surrender voltage VGSS : ±30 V guaranteed.
Avalanche energy capability guaranteed: EAS > 801 mJ.
High-speed switching: tf = 88 ns (typ. ).
Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current.
Avalanche energy capability VDSS VGSS ID IDP EAS 200 ±30 ±30 ±160 801 V V A A mJ Avalanche energy capability.
EAR 224 mJ 40 W Drain.

K4208 silicon n-channel enhancement mos fet by Panasonic - Datasheet Preview

Datasheet Details

Part number	K4208
Manufacturer	Panasonic
File Size	297.60 KB
Description	Silicon N-channel enhancement MOS FET
Datasheet	K4208 Datasheet

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Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttieProductnnulifecycleaenstage.dce/ Power MOS FETs This product complies with the RoHS Directive (EU 2002/95/EC). 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits  Features  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ  High-speed switching: tf = 88 ns (typ.