• Part: K4208
  • Manufacturer: Panasonic
  • Size: 297.60 KB
Download K4208 Datasheet PDF
K4208 datasheet preview
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K4208 Key Features

  • Gate-source surrender voltage VGSS : ±30 V guaranteed
  • Avalanche energy capability guaranteed: EAS > 801 mJ
  • High-speed switching: tf = 88 ns (typ.)

K4208 Description

Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttieProductnnulifecycleaenstage.dce/ Power MOS FETs This product plies with the RoHS Directive (EU 2002/95/EC). 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits.