Panasonic LN152
GaAs Infrared Light Emitting Diode
| Part No. | LN152 |
|---|---|
| Datasheet | LN152 Download |
| Manufacturer |  Panasonic |
| Description | GaAs Infrared Light Emitting Diode |
| Buy | Stock & Price |
FEATURES
High-power output, high-efficiency : PO = 10 mW (typ.) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.35 +0.2 –0.1 ø4.2 +0.1 –0.2 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 2-ø0.45±0.05 0 1. 5 .1 +0 0.1 – 1. 0 ±0 .1 45± 3˚ High-speed modulation 2 1ABSOLUTE MAXIMUM RATINGS
(Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 2.54±0.2 Symbol PD IF IFP * Ratings 160 100 1.5 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C 1: Anode 2: Cathode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-po...