Panasonic LN189M
GaAlAs Infrared Light Emitting Diode
| Part No. | LN189M |
|---|---|
| Datasheet | LN189M Download |
| Manufacturer |  Panasonic |
| Description | GaAlAs Infrared Light Emitting Diode |
| Buy | Stock & Price |
FEATURES
● High-power output, high-efficiency: PO = 5.5 mW (typ.)● Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.)
● Infrared light emission close to monochromatic light: λP = 880 nm (typ.)
● Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 6.0±0.3 1 0.4±0.1 Mark (Black) 0.3 , , , 0.6 4.0±0.15 1.0 2 0.6±0.1 3.0±0.2 0.2 3.4±0.2 6.0±0.3 Spherical lens φ0.4±0.03 0.6±0.1 0.5±0.1 0.15 0.75 2.0±0.2 Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * PD IF IFP VR Topr Tstg 160 90 175 3 −25 to +85 −40 to +100 mW mA mA V °C °C 1.5 Parameter Symbol Ratings Unit 0.1 max. 0.35 s
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C 1.5±0.2 3.2±0.15 1.0 2.2±0.15 1: Anode 2: Cathode Note) *: f = 10 kHz, Duty cycle = 25% s Electro-optical Characteristics Ta = 25°C Parameter Radiant power Peak emission wavelength Spectral band width Forward voltage (DC) Reverse current (DC) Rise time Fall time Half-power angle Precautions for Use [Airtightness] This product is not structured to provide a complete air seal.