Panasonic LN51L
GaAs Infrared Light Emitting Diodes
| Part No. | LN51L |
|---|---|
| Datasheet | LN51L Download |
| Manufacturer |  Panasonic |
| Description | GaAs Infrared Light Emitting Diodes |
| Buy | Stock & Price |
FEATURES
High-power output, high-efficiency : PO = 6 mW (typ.) Fast response : tr, tf = 1 µs (typ.) Infrared light emission close to monochromatic light : λP =950 nm (typ.) Narrow directivity, suitable for effective use of optical output : θ = 8 deg. (LN51L) Wide directivity, matched for external optical systems : θ = 32 deg. (LN51F) TO-18 standard type package 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± 2 1 ø5.75 max. 1: Cathode 2: Anode LN51L ø4.6±0.15 Glass lens Unit : mmABSOLUTE MAXIMUM RATINGS
(Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 150 100 2 5 –25 to +100 –30 to +100 Unit mW mA A V ˚C ˚C 12.7 min. 6.3±0.3 2-ø0.45±0.05 2.54±0.25 VR Topr Tstg 1. 0 0± .2 f = 100 Hz, Duty cycle = 0.1 % 5 1. 0± 0 .1 3˚ 45± 2 1 ø5.75 max. 1: Cathode 2: Anode Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width...