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MA111 - Switching Diodes

Key Features

  • Small S-mini type package, allowing high-density mounting.
  • Short reverse recovery time trr.
  • Small terminal capacitance, Ct.
  • High breakdown voltage (VR = 80 V) I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current.
  • VR VRM IF(AV) IFM IFSM 80 80 100 225 500 Junction temperature Storage temperature Note).
  • : t = 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes MA2J111 (MA111) Silicon epitaxial planar type For switching circuits I Features • Small S-mini type package, allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct • High breakdown voltage (VR = 80 V) I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* VR VRM IF(AV) IFM IFSM 80 80 100 225 500 Junction temperature Storage temperature Note) * : t = 1 s Tj 150 Tstg −55 to +150 Unit V V mA mA mA °C °C 1.25±0.1 0.35±0.1 Unit : mm 0.7±0.1 1 0 to 0.1 1.7±0.1 2.5±0.2 2 0.5±0.1 5° 0.16+–00..016 0.4±0.1 0 to 0.1 5° (0.