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MA158 - Silicon epitaxial planar type Switching Diodes

Key Features

  • s.
  • High reverse voltage VR.
  • Large forward current (Average) IF(AV).
  • Automatic mounting is possible.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage VR VRRM VRSM 200 250 300 Output current Repetitive peak forward current Non-repetitive peak forward surge current.
  • IO IFRM IFSM 100 225 500 Junction temperature Storage temperature Tj 125 Tstg.
  • 55.

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Datasheet Details

Part number MA158
Manufacturer Panasonic
File Size 212.50 KB
Description Silicon epitaxial planar type Switching Diodes
Datasheet download datasheet MA158 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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This product complies with the RoHS Directive (EU 2002/95/EC). Switching Diodes MA3X158 (MA158) Productnnu 0 Silicon epitaxial planar type For small power rectification and surge absorption ■ Features • High reverse voltage VR • Large forward current (Average) IF(AV) • Automatic mounting is possible ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage VR VRRM VRSM 200 250 300 Output current Repetitive peak forward current Non-repetitive peak forward surge current* IO IFRM IFSM 100 225 500 Junction temperature Storage temperature Tj 125 Tstg −55 to +125 Note) *: t = 1 s Unit V V V mA mA mA °C °C toli0.1feca1.1–+00..12ycleen 1.1–+00..13 stage.dc (0.65)e 1.50–+00..0255/ 2.