Click to expand full text
Switching Diodes
MA2B182
Silicon epitaxial planar type
φ 0.56 max.
Unit : mm
For high-voltage switching circuits, small power rectification
1
I Features
• High reverse voltage (VR = 200 V) • Large output current IO • DO-35 Package
1st Band 2nd Band
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Output current Repetitive peak reverse current Non-repetitive peak forward surge current surge current* Average power dissipation Junction temperature Storage temperature Note) * : t = l s Symbol VR VRRM IO IFRM IFSM PF(AV) Tj Tstg Rating 200 250 200 625 1 400 175 −65 to +175 Unit V V mA mA A mW °C °C
2 φ 1.95 max.
24 min.
MA2B182 Datasheet
