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MA2B182 - Switching Diodes

Key Features

  • High reverse voltage (VR = 200 V).
  • Large output current IO.
  • DO-35 Package 1st Band 2nd Band I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Output current Repetitive peak reverse current Non-repetitive peak forward surge current surge current.
  • Average power dissipation Junction temperature Storage temperature Note).
  • : t = l s Symbol VR VRRM IO IFRM IFSM PF(AV) Tj Tstg Rating 200 250 200 625 1 400 175.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes MA2B182 Silicon epitaxial planar type φ 0.56 max. Unit : mm For high-voltage switching circuits, small power rectification 1 I Features • High reverse voltage (VR = 200 V) • Large output current IO • DO-35 Package 1st Band 2nd Band I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Output current Repetitive peak reverse current Non-repetitive peak forward surge current surge current* Average power dissipation Junction temperature Storage temperature Note) * : t = l s Symbol VR VRRM IO IFRM IFSM PF(AV) Tj Tstg Rating 200 250 200 625 1 400 175 −65 to +175 Unit V V mA mA A mW °C °C 2 φ 1.95 max. 24 min.