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MA2B190 - Switching Diodes

Key Features

  • Low forward dynamic resistance rf.
  • Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Note).
  • : t = 1 s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 35 35 100 225 500 200.
  • 55 to +200 Unit V V mA mA mA °C °C 1st Band 2nd Band 2 φ 1.95 max.

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Switching Diodes MA2B190 Silicon epitaxial planar type φ 0.56 max. Unit : mm For switching circuits 1 I Features • Low forward dynamic resistance rf • Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 35 35 100 225 500 200 −55 to +200 Unit V V mA mA mA °C °C 1st Band 2nd Band 2 φ 1.95 max.