Overview: Switching Diodes MA2C178, MA2C179
Silicon epitaxial planar type
Unit : mm For high-speed switching circuits
φ 0.45 max. I Absolute Maximum Ratings Ta = 25°C
0.2 max. Parameter Reverse voltage (DC) Repetitive peak reverse voltage MA2C178 MA2C179 MA2C178 MA2C179 Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 40 80 40 80 200 600 1 200 −55 to +200 Unit V
2 V φ 1.75 max. Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s mA mA A °C °C 1 : Cathode 2 : Anode JEDEC : DO-34 I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) MA2C178 MA2C179 MA2C178 MA2C179 MA2C178 MA2C179 Forward voltage (DC) Terminal capacitance Reverse recovery time* VF Ct trr IR IR2 VR = 35 V VR = 75 V VR = 35 V, Ta = 150°C VR = 75 V, Ta = 150°C IF = 200 mA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 500 500 100 100 1.1 4 20 V pF ns µA nA Symbol IR1 VR = 15 V Conditions Min Typ Max 50 Unit nA Note) 1. Rated input/output frequency: 50 MHz 2. * : trr measuring circuit I Cathode Indication
Type No. Color 1st Band 2nd Band MA2C178 MA2C179 Violet White Violet Green 13 min. 2.2 ± 0.3 • Large forward current IFRM • High switching speed • Small terminal capacitance, Ct 1st Band 2nd Band 0.2 max. 13 min.
