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MA2C185 - Silicon epitaxial planar type Switching Diodes

Features

  • High reverse voltage (VR = 200 V).
  • Large output current IO.
  • Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole.

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Datasheet Details

Part number MA2C185
Manufacturer Panasonic
File Size 41.44 KB
Description Silicon epitaxial planar type Switching Diodes
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Switching Diodes MA2C185 Silicon epitaxial planar type Unit : mm For high-voltage switching circuits, small power rectification I Features • High reverse voltage (VR = 200 V) • Large output current IO • Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole COLORED BAND INDICATES CATHODE φ 0.45 max. 1 0.2 max. I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Output current Repetitive peak reverse current Non-repetitive peak forward surge current surge current* Average power dissipation Junction temperature Storage temperature Note) * : t = l s Symbol VR VRRM IO IFRM IFSM PF(AV) Tj Tstg Rating 200 250 200 625 1 400 175 −65 to +175 Unit V V mA mA A mW °C °C 2 φ 1.75 max.
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