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MA2C719 - Schottky Barrier Diodes

Features

  • DO-34 (DHD) package, allowing to rectify under (IF(AV) = 500 mA) condition.
  • Allowing high-density mounting (5 mm pitch insertion).
  • Optimum for high-frequency rectification because of its short reverse recovery time (trr).
  • High rectification efficiency caused by its low forward-risevoltage (VF).
  • High reliability achieved by the glass sealed package.

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Datasheet Details

Part number MA2C719
Manufacturer Panasonic
File Size 46.49 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA2C719 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA2C719 Silicon epitaxial planar type Unit : mm For high-frequency rectification I Features • DO-34 (DHD) package, allowing to rectify under (IF(AV) = 500 mA) condition • Allowing high-density mounting (5 mm pitch insertion) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • High rectification efficiency caused by its low forward-risevoltage (VF) • High reliability achieved by the glass sealed package COLORED BAND INDICATES CATHODE φ 0.45 max. 1 0.2 max.
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