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Schottky Barrier Diodes (SBD)
MA2C723
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For small current rectification I Features
• Allowing to rectify under (IF(AV) = 200 mA) condition • Sealed in DO-34 (DHD) package • Allowing high-density mounting (5 mm pitch insertion) • High reliability
φ 0.45 max. COLORED BAND INDICATES CATHODE 1
0.2 max.
0.2 max.
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Non-repetitive peak forward surge current* Peak forward current Forward current (DC) Junction temperature Storage temperature Symbol VR IFSM IFM IF(AV) Tj Tstg Rating 30 1.5 300 200 150 −55 to +150 Unit V A mA mA °C °C
2 φ 1.75 max.