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MA2C774 - Schottky Barrier Diodes

Features

  • Sealed in small glass package (DO-34).
  • Allowing to insert to a 5 mm pitch hole.
  • Allowing to rectify under (IF(AV) = 100 mA) condition.
  • Optimum for high-frequency rectification because of its short reverse recovery time (trr).
  • Low VF (forward rise voltage), with high rectification efficiency.

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Datasheet Details

Part number MA2C774
Manufacturer Panasonic
File Size 44.67 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA2C774 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA2C774 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Sealed in small glass package (DO-34) • Allowing to insert to a 5 mm pitch hole • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency COLORED BAND INDICATES CATHODE φ 0.45 max. 1 0.2 max. 0.2 max.
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