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Schottky Barrier Diodes (SBD)
MA2D755
Silicon epitaxial planar type
Unit : mm
For switching power supply
9.9 ± 0.3 4.6 ± 0.2
13.7 ± 0.2 4.2 ± 0.2
• TO-220D Package • Allowing to rectify under (IF(AV) = 5 A) condition • VR = 60 V guaranteed • Single type
15.0 ± 0.5
I Features
φ 3.2 ± 0.1
1.5 − 0.4
+0
3.0 ± 0.5
2.9 ± 0.2
2.6 ± 0.1 1.4 ± 0.2 0.8 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 60 5 90 −40 to +125 −40 to +125 Unit V A A °C °C
0.55 ± 0.15
5.08 ± 0.5 2.54 ± 0.
MA2D755 Datasheet
