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MA2DF22 - Fast Recovery Diodes

Features

  • r>.
  • Super high speed switching characteristic: trr = 20 ns (typ. ).
  • Low forward voltage VF.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Forward current (Average).
  • 1 Non-repetitive peak forward surge current.
  • 2 VRRM VRSM IF(AV) IFSM 200 200 5 40 Junction temperature Tj.
  • 40 to +150 Storage temperature Tstg.
  • 40 to +150 Note).
  • 1: TC = 25°C.
  • 2: 50 Hz sin.

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Full PDF Text Transcription

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Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttieProductnnulifecycleaenstage.dce/ This product complies with the RoHS Directive (EU 2002/95/EC). Fast Recovery Diodes (FRD) MA2DF22 Silicon mesa type For high frequency retification (Second rectification in swithing mode power supply)  Features  Super high speed switching characteristic: trr = 20 ns (typ.
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