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Schottky Barrier Diodes (SBD)
MA2P701, MA2P701A
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
0.5 ± 0.1
1 2 5.0 ± 0.5
I Features
• Low forward rise voltage VF, optimum for low-voltage rectification • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Allowing large-current rectification in spite of its small-size because of its low thermal resistance (Rth(j-a))
4.0 ± 0.2 1.5 ± 0.1
4.0 ± 0.5 3.0 ± 0.2
0.7 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage MA2P701 MA2P701A MA2P701 MA2P701A IFM IF(AV) IFSM Tj Tstg VRRM Symbol VR Rating 20 40 20 40 2 1 6 125 −55 to +125 A A A °C °C V Unit V
1.5 ± 0.
MA2P701A Datasheet
