MA2S077 Datasheet Text
Band Switching Diodes
MA2S077
Silicon epitaxial planar type
Unit : mm
For band switching
0.15 min. 0.15 min.
I Features
- Low forward dynamic resistance rf
- Less voltage dependence of diode capacitance CD
- SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27
- 0.02 0.8 ± 0.1
+ 0.05
1.3 ± 0.1 1.7 ± 0.1
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature- Storage temperature
Symbol VR IF Topr Tstg
Rating 35 100
- 25 to +85
- 55 to +150
Unit V mA °C °C
0.7 ± 0.1
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
Note)
- : Maximum ambient temperature during operation
Marking Symbol: S
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance- Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1.0 1.2 0.85 Unit nA V pF Ω
Note) 1 Rated input/output frequency: 100 MHz 2
- : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0 to 0.1...