• Part: MA2S111
  • Description: Schottky Barrier Diodes
  • Manufacturer: Panasonic
  • Size: 46.39 KB
Download MA2S111 Datasheet PDF
MA2S111 page 2
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MA2S111 Datasheet Text

Switching Diodes MA2S111 Silicon epitaxial planar type Unit : mm For switching circuits I Features - Super-small SS-mini type package - Allowing high-density mounting - Short reverse recovery time trr - Small terminal capacitance, Ct 1.60 ± 0.05 ( 0.2 ) 1.20 - 0.03 0.30 ± 0.05 0.80 - 0.03 + 0.05 + 0.05 1 2 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current- Junction temperature Storage temperature Note) - : t = 1 s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 - 55 to +150 Unit V V mA mA mA °C °C 0.6 ± 0.05 1 : Anode 2 : Cathode EIAJ : SC-79 SS-Mini Type Package (2-pin) Marking Symbol: A I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time- Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR =100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 - IR, RL = 100 Ω 80 0.6 2 3 0.95 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2....