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Switching Diodes
MA2S111
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
• Super-small SS-mini type package • Allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct
1.60 ± 0.05 ( 0.2 ) 1.20 − 0.03
0.30 ± 0.05 0.80 − 0.03
+ 0.05
+ 0.05
1
2
Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s
Symbol VR VRM IF(AV) IFM IFSM Tj Tstg
Rating 80 80 100 225 500 150 −55 to +150
Unit V V mA mA mA °C °C
0.6 ± 0.