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MA2S111 - Schottky Barrier Diodes

Key Features

  • Super-small SS-mini type package.
  • Allowing high-density mounting.
  • Short reverse recovery time trr.
  • Small terminal capacitance, Ct 1.60 ± 0.05 ( 0.2 ) 1.20.
  • 0.03 0.30 ± 0.05 0.80.
  • 0.03 + 0.05 + 0.05 1 2 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Note).
  • : t = 1 s Symbol VR VRM IF(AV) IFM IFSM T.

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Datasheet Details

Part number MA2S111
Manufacturer Panasonic
File Size 46.39 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA2S111 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes MA2S111 Silicon epitaxial planar type Unit : mm For switching circuits I Features • Super-small SS-mini type package • Allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct 1.60 ± 0.05 ( 0.2 ) 1.20 − 0.03 0.30 ± 0.05 0.80 − 0.03 + 0.05 + 0.05 1 2 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C 0.6 ± 0.